2.18. Structural-Electric-Diffusion Analysis

Use a structural-electric-diffusion analysis to perform diffusion stress analysis, hydrostatic stress migration analysis, and electromigration analysis. Applications include development of stress during the process of electromigration in metallic interconnects.

2.18.1. Elements Used in a Structural-Electric-Diffusion Analysis

Table 2.37: Elements Used in Structural-Electric-Diffusion Analyses summarizes the elements that you can use to perform a coupled thermal-electric-diffusion analysis. For detailed descriptions of the elements and their characteristics (degrees of freedom, KEYOPT options, inputs and outputs, etc.), see the Element Reference.

For a coupled structural-electric-diffusion analysis, you need to select the UX, UY, UZ, VOLT and CONC element degrees of freedom by setting KEYOPT(1) to 100101 for the coupled-field elements.

The structural-electric-diffusion KEYOPT settings also make large-deflection, stress-stiffening, and prestress effects available (NLGEOM and PSTRES). (See Structures with Geometric Nonlinearities in the Theory Reference for more information about these capabilities.)

Table 2.37: Elements Used in Structural-Electric-Diffusion Analyses

Elements Effects Analysis Types

PLANE222 - 4-Node Coupled-Field Quadrilateral

PLANE223 - 8-Node Coupled-Field Quadrilateral

SOLID225 - 8-Node Coupled-Field Hexahedral

SOLID226 - 20-Node Coupled-Field Hexahedral

SOLID227 - 10-Node Coupled-Field Tetrahedral

Diffusion strain

Hydrostatic stress migration[a]

Electromigration

Piezoresistivity

Static

Full Transient

[a] The hydrostatic stress migration effect is available only with high-order coupled-field elements PLANE223, SOLID226, and SOLID227.


2.18.2. Performing a Structural-Electric-Diffusion Analysis

To perform a structural-electric-diffusion analysis, you need to follow the steps outlined in Performing a Structural-Diffusion Analysis, Performing an Electric-Diffusion Analysis, andPiezoresistive Analysis.

2.18.3. Example: Electromigration and Stress Migration in a Solder Joint

This example demonstrates a transient structural-electric-diffusion analysis of a solder joint. Note that the geometric and material properties are input in the μMKSV system of units. For more information on units, see System of Units.

2.18.3.1. Problem Description

An SAC (SnAgCu) solder ball is sandwiched between two copper strips. A half symmetry model of the solder ball and the strips is discretized using the structural-electric-diffusion analysis option (KEYOPT(1) = 100101) of the SOLID227 coupled-field element. A step current load I = 2.85 A is applied to the bottom strip; the top strip is grounded. A uniform temperature of 200 °C is applied to the ball. The initial normalized concentration of atoms is set to 1.

A transient analysis is performed for 100 hours to determine the evolution of atomic concentration over time as the atoms (ions) migrate under the gradient of hydrostatic stress (stress-migration), the electric field (electromigration) and the gradient of concentration (diffusion).

The material parameters for stress-migration and electromigration are specified using the migration model (TB,MIGR). Initially, only the thermal expansion determines the stress distribution. After the atomic concentration changes from the initial equilibrium value, diffusion expansion contributes to the stress state and thus to stress-migration (backstress).

2.18.3.2. Results

The numerical results at the end of the simulation are shown in the following figures:

Figure 2.101: Electric Potential in the Solder Joint

Electric Potential in the Solder Joint

Figure 2.102: Concentration in the Solder Joint

Concentration in the Solder Joint

Figure 2.103: Displacement Distribution in the Solder Joint

Displacement Distribution in the Solder Joint

Figure 2.104: Hydrostatic Pressure in the Solder Joint

Hydrostatic Pressure in the Solder Joint

2.18.3.3. Command Listing

The command text below demonstrates the problem input. All text prefaced with an exclamation point (!) is a comment.

/title, Electromigration and stress migration in a solder joint 
/pnum,volu,1
/prep7
! Model (sizes in um)
wprota,,-90
sphere,380,,0,180

wprota,,180
wpoffs,,,225
vsbw,1
numcmp,volu
vdele,1,,,1
numcmp,volu
wpoffs,,,-450
vsbw,1
numcmp,volu
vdele,1
numcmp,volu

block,-400,600,-400,0,-40,0
wpoffs,,,450
block,-600,400,-400,0,0,40
vglue,all
numcmp,volu
vplot
!
! Constants and material coefficients in uMKS system of units
!
kB=1.3806488e-23*1.e12   ! Boltzmann constant, pJ/K
kB_eV=8.6173324e-5       ! Boltzmann constant, eV/K

! Copper (mat 1)
et,1,solid227,100101     ! structural-electric-diffusion 

mp,rsvx,1,2.38e-8*1e-6   ! electric resistivity, TOhm*um @ 200 C

mp,dxx,1,7.8e-5*1e12     ! pre-exponential diffusivity, (um)^2/s

Qa=210e3                 ! activation energy, J/(K*mol)
R=8.31445                ! universal gas constant, J/(K*mol)

V1=1.182e-29*1e18        ! atomic volume, um^3
Z1=-4                    ! charge number

tb,migr,1                ! migration model for Cu
tbdata,1,Qa/R            ! diffusivity
tbdata,2,V1/kB           ! hydrostatic stress migration
tbdata,4,Z1/kB_eV        ! electromigration

mp,ex,1,127.7e9*1e-6     ! Young's modulus, MPa
mp,prxy,1,0.31           ! Poisson's ratio

mp,cref,1,1              ! reference concentration 
mp,betx,1,1e-5           ! coefficient of diffusion expansion 
                         ! for backstress calculation

tref,25                  ! reference temperature and
mp,alpx,1,17.1e-6        ! coefficient of thermal expansion 1/deg
                         ! for thermal strain calculation

! Solder - SAC (mat 2)
et,2,solid227,100101
mp,rsvx,2,20.75e-8*1e-6  ! electric resistivity @ 200 degC, TOhm*um
mp,dxx,2,4.1e-5*1e12     ! pre-exponential diffusivity, (um)^2/s

mp,ex,2,26.2e9*1e-6      ! Young's modulus
mp,prxy,2,0.35           ! Poisson's ratio

V2=2.71e-29*1e18         ! atomic volume, um^3

mp,cref,2,1              ! reference normalized concentration 
mp,betx,2,1e-5           ! coefficient of diffusion expansion 
                         ! for backstress calculation

mp,alpx,2,23e-6          ! coefficient of thermal expansion, 1/deg

Ea=0.8                   ! activation energy, eV
Z2=-23                   ! charge number

tb,migr,2                ! migration model for SAC solder joint
tbdata,1,Ea/kB_eV        ! diffusivity
tbdata,2,V2/kB           ! hydrostatic stress migration
tbdata,4,Z2/kB_eV        ! electromigration

type,1
mat,1
esize,40
vmesh,2,3

type,2
mat,2
vmesh,1

nsel,s,loc,x,600         ! top electrode
d,all,volt,0
nsel,s,loc,x,-600        ! bottom electrode
cp,1,volt,all
nd=ndnext(0)
allsel

! Loads
bf,all,temp,200          ! temperature, degC
toffst,273               ! temperature offset from absolute zero to zero, degC

f,nd,amps,2.85e12/2      ! total current for half-model, pA 

nsel,s,loc,y,-265        ! structural constraints
nsel,a,loc,y,265
d,all,uy,0
nsel,s,loc,x,-600
d,all,ux,0
nsel,s,loc,z,0
d,all,uz,0
nsel,all

finish

/solu
antype,trans             ! transient analysis
ic,all,conc,1            ! initial normalized concentration
time,3.6e5               ! simulation time, s (100 hours)
nsubst,40
kbc,1
autots,off
nlgeom,on                ! large-deflection effects enabled
outres,all,all
solve    
finish

/post1
set,last,last
/title, Electric potential
plnsol,volt
/title, Concentration
plnsol,conc
/title, Displacement
plnsol,u,sum
/title, Hydrostatic pressure
plnsol,nl,hpres
finish