The base of the silicon substrate is constrained in all structural degrees of freedom. Also, a temperature of -200 °C is applied to the membrane to represent the manufacturing tension prestress.

A DC bias voltage of 1.5 V is applied to the membrane to illustrate the variation of capacitance with bias voltage. The backplate is grounded.

After a static analysis under structural and electrical loading (temperature and DC bias), a linear perturbation harmonic analysis is performed to analyze the response of the microphone under an incoming pressure wave. In that regards, a velocity of 0.01 m/s and an infinite radiation boundary are applied on the sound port inlet.