In some reacting flow simulations there may be different types of solid
surfaces at which very distinct heterogeneous chemistry takes place. For example, in a plasma
etching reactor there might be a wafer composed of silicon and reactor side-walls composed of
aluminum. Although the main purpose of the simulation might be to understand the etching
chemistry at the wafer, reactions at the walls also serve to create and destroy species. Because
chemical reaction mechanisms occurring at the surfaces can be quite different, Pre-processor
allows the use of "multiple materials" in input files. This essentially allows the user to
specify several different and complete surface reaction mechanisms, one after another (separated
by a MATERIAL
line). An example of such a Surface Kinetics input file is
shown in Example 3.8: Surface Kinetics input file using multiple materials.
Note: The mechanism has been contrived to illustrate a variety of points about the data structures and should not be taken as a source of data for silicon or aluminum processes.
Example 3.8: Surface Kinetics input file using multiple materials
Surface Kinetics Pre-processor Input MATERIAL WAFER SITE/POLY/ SDEN/2.25e-9/ SI(S) SICL(S) SICL2(S) SICL3(S) END BULK SI(B)/2.33/ END REACTIONS MWOFF CL + SI(S) => SICL(S) 1.0 0.0 0.0 STICK CL + SICL(S) => SICL2(S) 0.4 0.0 0.0 STICK CL + SICL2(S) => SICL3(S) 0.1 0.0 0.0 STICK END MATERIAL WALL SITE/METAL/ SDEN/2.25E-9/ AL(S) ALCL(S) ALCL2(S) END BULK AL(B)/2.7/ END REACTIONS MWOFF CL + AL(S) => ALCL(S) 1.0 0.0 0.0 STICK CL + ALCL(S) => ALCL2(S) 0.4 0.0 0.0 STICK CL + ALCL2(S) + AL(B) => ALCL3 + AL(S) 0.1 0.0 0.0 STICK END