Advanced Settings for Characterizing a Power Diode

Click Adv. Settingsin the Dynamic Model Input [6/8] dialog box to access advanced settings of power diode characterization. There are two tabs: Extraction Settings and Model & Goal Settings.

Advanced Parameter Setting Dialog Box

These settings allow for more control over the characterization process, but it should not be necessary to change them for most devices. The diode model used for characterization also appears as a sub model of the dynamic IGBT and MOSFET models.

Use the Dynamic Behavior drop-down list to choose a reverse recovery model. The mapping between the menu options and value of parameter TYPE_DYN is:

Description of parameter TYPE_DYN and different reverse recovery models can be found in . Note that in the final characterized model, TYPE_DYN is added by 10 so it takes external synchronization input for accuracy of switching behavior (see TYPE_DYN=x+10 in the detailed documentation). That is why we see value of TYPE_DYN is 11, 12 or 13 in characterized power diodes.

You can choose dynamic fitting goals in Select Goals to Display. The checked goals appear in the table of dialog box Dynamic Model Input [6/8], so it can be included as fitting goals during extraction.